2N5551G-B-AB3-R 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: UTC(Unisonic Tech) 2N5551G-B-AB3-R
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 500mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 150@10mA,5V
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
- Package: SOT-89-3
- Manufacturer: UTC(Unisonic Tech)
